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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > JAN1N5552US

JAN1N5552US

JAN1N5552US
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number JAN1N5552US
Manufacturer Microsemi Corporation
Description DIODE GEN PURP 600V 3A B-MELF
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 6722 pcs
Reference Price
(In US Dollars)
100 pcs
$4.934

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Target Price:(USD)
Quantity:
Total:
$4.934

Product parameter

Part Number JAN1N5552US Manufacturer Microsemi Corporation
Description DIODE GEN PURP 600V 3A B-MELF Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 6722 pcs Data sheet 1N5550US thru 1N5554US
Category Discrete Semiconductor Products Voltage - Peak Reverse (Max) Standard
Voltage - Forward (Vf) (Max) @ If 3A Voltage - Breakdown D-5B
Series Military, MIL-PRF-19500/420 RoHS Status Bulk
Reverse Recovery Time (trr) Fast Recovery = 200mA (Io) Resistance @ If, F -
Polarization SQ-MELF, B Other Names 1086-19414
1086-19414-MIL
Operating Temperature - Junction 2µs Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number JAN1N5552US Expanded Description Diode Standard 600V 3A Surface Mount D-5B
Diode Configuration 1µA @ 600V Description DIODE GEN PURP 600V 3A B-MELF
Current - Reverse Leakage @ Vr 1.2V @ 9A Current - Average Rectified (Io) (per Diode) 600V
Capacitance @ Vr, F -65°C ~ 175°C

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