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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > JAN1N5550US

JAN1N5550US

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Part Number JAN1N5550US
Manufacturer Microsemi Corporation
Description DIODE GEN PURP 200V 3A B-MELF
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5994 pcs
Reference Price
(In US Dollars)
100 pcs
$5.044

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Target Price:(USD)
Quantity:
Total:
$5.044

Product parameter

Part Number JAN1N5550US Manufacturer Microsemi Corporation
Description DIODE GEN PURP 200V 3A B-MELF Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5994 pcs Data sheet 1N5550US thru 1N5554US
Category Discrete Semiconductor Products Voltage - Peak Reverse (Max) Standard
Voltage - Forward (Vf) (Max) @ If 3A Voltage - Breakdown D-5B
Series Military, MIL-PRF-19500/420 RoHS Status Bulk
Reverse Recovery Time (trr) Fast Recovery = 200mA (Io) Resistance @ If, F -
Polarization SQ-MELF, B Other Names 1086-19411
1086-19411-MIL
Operating Temperature - Junction 2µs Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number JAN1N5550US Expanded Description Diode Standard 200V 3A Surface Mount D-5B
Diode Configuration 1µA @ 200V Description DIODE GEN PURP 200V 3A B-MELF
Current - Reverse Leakage @ Vr 1.2V @ 9A Current - Average Rectified (Io) (per Diode) 200V
Capacitance @ Vr, F -65°C ~ 175°C

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