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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APT34N80B2C3G

APT34N80B2C3G

APT34N80B2C3G
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number APT34N80B2C3G
Manufacturer Microsemi
Description MOSFET N-CH 800V 34A T-MAX
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 11334 pcs
Reference Price
(In US Dollars)
1 pcs30 pcs120 pcs510 pcs
$4.737$3.982$3.659$3.121

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$4.737

Product parameter

Part Number APT34N80B2C3G Manufacturer Microsemi
Description MOSFET N-CH 800V 34A T-MAX Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 11334 pcs Data sheet Power Products CatalogAPT34N80(B2,L)C3
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.9V @ 2mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package T-MAX™ [B2] Series -
Rds On (Max) @ Id, Vgs 145 mOhm @ 22A, 10V Power Dissipation (Max) 417W (Tc)
Packaging Tube Package / Case TO-247-3 Variant
Other Names APT34N80B2C3GMI
APT34N80B2C3GMI-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2] Current - Continuous Drain (Id) @ 25°C 34A (Tc)

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