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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RS1E350BNTB

RS1E350BNTB

RS1E350BNTB
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number RS1E350BNTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 35A 8HSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 76621 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.652$0.588$0.473$0.368$0.305

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Target Price:(USD)
Quantity:
Total:
$0.652

Product parameter

Part Number RS1E350BNTB Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 35A 8HSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 76621 pcs Data sheet RS1E350BNHSMT8 TB Taping Spec
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-HSOP Series -
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 35A, 10V Power Dissipation (Max) 35W (Tc)
Packaging Original-Reel® Package / Case 8-PowerTDFN
Other Names RS1E350BNTBDKR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
Current - Continuous Drain (Id) @ 25°C 35A (Ta)

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