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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RS1E170GNTB

RS1E170GNTB

RS1E170GNTB
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Part Number RS1E170GNTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 17A 8-HSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 220738 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.092

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Target Price:(USD)
Quantity:
Total:
$0.092

Product parameter

Part Number RS1E170GNTB Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 17A 8-HSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 220738 pcs Data sheet RS1E170GNHSMT8 TB Taping Spec
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-HSOP Series -
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 17A, 10V Power Dissipation (Max) 3W (Ta), 23.7W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerTDFN
Other Names RS1E170GNTBTR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 17A (Ta) 3W (Ta), 23.7W (Tc) Surface Mount 8-HSOP Current - Continuous Drain (Id) @ 25°C 17A (Ta)

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