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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RS1E200GNTB

RS1E200GNTB

RS1E200GNTB
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Part Number RS1E200GNTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 20A 8-HSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 193953 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.115

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Quantity:
Total:
$0.115

Product parameter

Part Number RS1E200GNTB Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 20A 8-HSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 193953 pcs Data sheet RS1E200GN
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-HSOP Series -
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 20A, 10V Power Dissipation (Max) 3W (Ta), 25.1W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerTDFN
Other Names RS1E200GNTBTR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface Mount 8-HSOP Current - Continuous Drain (Id) @ 25°C 20A (Ta)

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