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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD713ZETL

DTD713ZETL

DTD713ZETL
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Part Number DTD713ZETL
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW EMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 734161 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.034

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Quantity:
Total:
$0.034

Product parameter

Part Number DTD713ZETL Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW EMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 734161 pcs Data sheet DTD713ZE,ZM
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package EMT3 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 260MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 200mA Base Part Number DTD713

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