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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5902BDC-T1-E3

SI5902BDC-T1-E3

SI5902BDC-T1-E3

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Part Number	SI5902BDC-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 4A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 89531 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.562	$0.496	$0.392	$0.304	$0.24

Product parameter
Data sheet

Product parameter

Part Number	SI5902BDC-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 4A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	89531 pcs	Data sheet	SI5902BDC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	65 mOhm @ 3.1A, 10V
Power - Max	3.12W	Packaging	Cut Tape (CT)
Package / Case	8-SMD, Flat Lead	Other Names	SI5902BDC-T1-E3CT
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	33 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V	FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Detailed Description	Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W Surface Mount	Current - Continuous Drain (Id) @ 25°C	4A (Tc)

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