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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5855DC-T1-E3

SI5855DC-T1-E3

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Part Number	SI5855DC-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 2.7A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5989 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5855DC-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 2.7A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5989 pcs	Data sheet	SI5855DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1V @ 250µA
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	110 mOhm @ 2.7A, 4.5V	Power Dissipation (Max)	1.1W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Other Names	SI5855DC-T1-E3TR SI5855DCT1E3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
FET Type	P-Channel	FET Feature	Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)

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