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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5858DU-T1-GE3

SI5858DU-T1-GE3

SI5858DU-T1-GE3
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Part Number SI5858DU-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 6A PPAK CHIPFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4726 pcs
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Part Number SI5858DU-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 6A PPAK CHIPFET Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4726 pcs Data sheet SI5858DU
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® ChipFet Dual Series LITTLE FOOT®
Rds On (Max) @ Id, Vgs 39 mOhm @ 4.4A, 4.5V Power Dissipation (Max) 2.3W (Ta), 8.3W (Tc)
Packaging Tape & Reel (TR) Package / Case PowerPAK® ChipFET™ Dual
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
FET Type N-Channel FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description N-Channel 20V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFet Dual Current - Continuous Drain (Id) @ 25°C 6A (Tc)

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