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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4888DY-T1-GE3

SI4888DY-T1-GE3

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Part Number SI4888DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 11A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4550 pcs
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Part Number SI4888DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 11A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4550 pcs Data sheet SI4888DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.6V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 7 mOhm @ 16A, 10V Power Dissipation (Max) 1.6W (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 11A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 11A (Ta)

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