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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4876DY-T1-E3

SI4876DY-T1-E3

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Part Number SI4876DY-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 14A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5433 pcs
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Part Number SI4876DY-T1-E3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 14A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5433 pcs Data sheet SI4876DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 5 mOhm @ 21A, 4.5V Power Dissipation (Max) 1.6W (Ta)
Packaging Cut Tape (CT) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4876DY-T1-E3CT
SI4876DYT1E3		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 14A (Ta)

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