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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4876DY-T1-GE3

SI4876DY-T1-GE3

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Part Number	SI4876DY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 14A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 6044 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI4876DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 14A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6044 pcs	Data sheet	SI4876DY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Vgs (Max)	±12V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	5 mOhm @ 21A, 4.5V	Power Dissipation (Max)	1.6W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs	80nC @ 4.5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Drain to Source Voltage (Vdss)	20V	Detailed Description	N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C	14A (Ta)

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