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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4532ADY-T1-GE3

SI4532ADY-T1-GE3

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Part Number SI4532ADY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 30V 3.7A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5655 pcs
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Part Number SI4532ADY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 30V 3.7A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5655 pcs Data sheet SI4532ADY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Series TrenchFET® Rds On (Max) @ Id, Vgs 53 mOhm @ 4.9A, 10V
Power - Max 1.13W, 1.2W Packaging Cut Tape (CT)
Package / Case 8-SOIC (0.154", 3.90mm Width) Other Names SI4532ADY-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds - Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
FET Type N and P-Channel FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V Detailed Description Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1.2W Surface Mount
Current - Continuous Drain (Id) @ 25°C 3.7A, 3A

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