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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4511DY-T1-GE3

SI4511DY-T1-GE3

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Part Number	SI4511DY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 7.2A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4755 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI4511DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 7.2A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4755 pcs	Data sheet	SI4511DY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.8V @ 250µA
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 9.6A, 10V	Power - Max	1.1W
Packaging	Cut Tape (CT)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Other Names	SI4511DY-T1-GE3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V	FET Type	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Detailed Description	Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W Surface Mount 8-SO	Current - Continuous Drain (Id) @ 25°C	7.2A, 4.6A
Base Part Number	SI4511

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