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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4500BDY-T1-E3

SI4500BDY-T1-E3

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Part Number	SI4500BDY-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 6.6A 8SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5912 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	SI4500BDY-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 6.6A 8SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5912 pcs	Data sheet	SI4500BDY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	20 mOhm @ 9.1A, 4.5V	Power - Max	1.3W
Packaging	Cut Tape (CT)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Other Names	SI4500BDY-T1-E3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V	FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Detailed Description	Mosfet Array N and P-Channel, Common Drain 20V 6.6A, 3.8A 1.3W Surface Mount 8-SO	Current - Continuous Drain (Id) @ 25°C	6.6A, 3.8A
Base Part Number	SI4500

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