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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMG4N-7

UMG4N-7

UMG4N-7
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Part Number UMG4N-7
Manufacturer Diodes Incorporated
Description TRANS 2NPN PREBIAS 0.15W SOT353
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 400511 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.06

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Quantity:
Total:
$0.06

Product parameter

Part Number UMG4N-7 Manufacturer Diodes Incorporated
Description TRANS 2NPN PREBIAS 0.15W SOT353 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 400511 pcs Data sheet UMG4N
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SOT-353 Series -
Resistor - Emitter Base (R2) - Resistor - Base (R1) 10 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case 5-TSSOP, SC-70-5, SOT-353 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 24 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353 DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA

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