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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC113EDXV6T1G

NSBC113EDXV6T1G

NSBC113EDXV6T1G
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Part Number NSBC113EDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4467 pcs
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Part Number NSBC113EDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2NPN PREBIAS 0.5W SOT563 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4467 pcs Data sheet MUN5230DW1, NSBC113EDXV6
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 1 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 500mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names NSBC113EDXV6T1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number NSBC1*

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