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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTLJS4159NT1G

NTLJS4159NT1G

NTLJS4159NT1G
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Part Number NTLJS4159NT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 3.6A 6-WFDN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5194 pcs
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Part Number NTLJS4159NT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 3.6A 6-WFDN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5194 pcs Data sheet NTLJS4159N
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 6-WDFN (2x2) Series -
Rds On (Max) @ Id, Vgs 35 mOhm @ 2A, 4.5V Power Dissipation (Max) 700mW (Ta)
Packaging Tape & Reel (TR) Package / Case 6-WDFN Exposed Pad
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1045pF @ 15V Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2) Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)

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