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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTLJS3113PT1G

NTLJS3113PT1G

NTLJS3113PT1G
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Part Number NTLJS3113PT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 3.5A 6-WFDN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 272746 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.077

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Quantity:
Total:
$0.077

Product parameter

Part Number NTLJS3113PT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 3.5A 6-WFDN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 272746 pcs Data sheet NTLJS3113P
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 6-WDFN (2x2) Series µCool™
Rds On (Max) @ Id, Vgs 40 mOhm @ 3A, 4.5V Power Dissipation (Max) 700mW (Ta)
Packaging Tape & Reel (TR) Package / Case 6-WDFN Exposed Pad
Other Names NTLJS3113PT1G-ND
NTLJS3113PT1GOSTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 6 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2) Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)

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