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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSBA123EF3T5G

NSBA123EF3T5G

NSBA123EF3T5G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number NSBA123EF3T5G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS DUAL PNP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 716979 pcs
Reference Price
(In US Dollars)		8000 pcs
$0.035

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Part Number NSBA123EF3T5G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS DUAL PNP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 716979 pcs Data sheet MUN(2,5)131, MMUN2131L, DTA123Exx, NSBA123EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-1123 Series -
Resistor - Emitter Base (R2) 2.2 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 254mW Packaging Tape & Reel (TR)
Package / Case SOT-1123 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 13 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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