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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBA115EDXV6T1G

NSBA115EDXV6T1G

NSBA115EDXV6T1G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number NSBA115EDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 517491 pcs
Reference Price
(In US Dollars)		4000 pcs
$0.042

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$0.042

Product parameter

Part Number NSBA115EDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 517491 pcs Data sheet MUN5136DW1, NSBA115EDXV6
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 100 kOhms Resistor - Base (R1) 100 kOhms
Power - Max 500mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names NSBA115EDXV6T1G-ND
NSBA115EDXV6T1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 5 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number NSBA1*

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