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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBA114YDXV6T1G

NSBA114YDXV6T1G

NSBA114YDXV6T1G
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Part Number NSBA114YDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 617134 pcs
Reference Price
(In US Dollars)		4000 pcs
$0.038

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Total:
$0.038

Product parameter

Part Number NSBA114YDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 617134 pcs Data sheet MUN5114DW1, NSBA114YDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 500mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names NSBA114YDXV6T1GOS
NSBA114YDXV6T1GOS-ND
NSBA114YDXV6T1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 4 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number NSBA1*

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