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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVMJD112G

NJVMJD112G

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Part Number	NJVMJD112G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A DPAK-4
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 136585 pcs
Reference Price (In US Dollars)	825 pcs
Reference Price (In US Dollars)	$0.143

Product parameter
Data sheet

Product parameter

Part Number	NJVMJD112G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A DPAK-4	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	136585 pcs	Data sheet	MJD112,117
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	Transistor Type	NPN - Darlington
Supplier Device Package	DPAK	Series	-
Power - Max	1.75W	Packaging	Tube
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	5 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	25MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	Current - Collector Cutoff (Max)	20µA
Current - Collector (Ic) (Max)	2A

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