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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVBUB323ZT4G

NJVBUB323ZT4G

NJVBUB323ZT4G
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Part Number NJVBUB323ZT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 350V 10A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 51879 pcs
Reference Price
(In US Dollars)		800 pcs
$0.698

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$0.698

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Part Number NJVBUB323ZT4G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 350V 10A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 51879 pcs Data sheet BUB323Z
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A Transistor Type NPN - Darlington
Supplier Device Package D2PAK-3 Series -
Power - Max 150W Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 28 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 2MHz Detailed Description Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Surface Mount D2PAK-3
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A, 4.6V Current - Collector Cutoff (Max) 100µA
Current - Collector (Ic) (Max) 10A

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