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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVBDX53C

NJVBDX53C

NJVBDX53C
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Part Number NJVBDX53C
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A TO-220AB
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5814 pcs
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Part Number NJVBDX53C Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A TO-220AB Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5814 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A Transistor Type NPN - Darlington
Supplier Device Package TO-220AB Series -
Power - Max 65W Packaging Tube
Package / Case TO-220-3 Operating Temperature -
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 8A 65W Through Hole TO-220AB DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Current - Collector Cutoff (Max) 500µA Current - Collector (Ic) (Max) 8A
Base Part Number BDX53

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