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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5113DW1T1G

MUN5113DW1T1G

MUN5113DW1T1G
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Part Number MUN5113DW1T1G
Manufacturer ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2102965 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs30000 pcs65535 pcs
$0.018$0.016$0.014$0.013$0.01

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Product parameter

Part Number MUN5113DW1T1G Manufacturer ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2102965 pcs Data sheet MUN5113DW1, NSBA144EDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100mA
Voltage - Breakdown SC-88/SC70-6/SOT-363 Vce Saturation (Max) @ Ib, Ic 50V
Series - RoHS Status Tape & Reel (TR)
Resistor - Emitter Base (R2) (Ohms) 47k Resistor - Base (R1) (Ohms) -
Power - Max 250mW Polarization 6-TSSOP, SC-88, SOT-363
Other Names MUN5113DW1T1G-ND
MUN5113DW1T1GOSTR		 Noise Figure (dB Typ @ f) 47k
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Manufacturer Part Number MUN5113DW1T1G
Frequency - Transition 80 @ 5mA, 10V Expanded Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Description TRANS 2PNP PREBIAS 0.25W SOT363 DC Current Gain (hFE) (Min) @ Ic, Vce 500nA
Current - Collector Cutoff (Max) 250mV @ 300µA, 10mA Current - Collector (Ic) (Max) 2 PNP - Pre-Biased (Dual)

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