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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5111DW1T1G

MUN5111DW1T1G

MUN5111DW1T1G
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Part Number MUN5111DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1345200 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.091$0.073$0.039$0.025$0.017

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$0.091

Product parameter

Part Number MUN5111DW1T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1345200 pcs Data sheet MUN5111DW1, NSBA114EDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 250mW Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names MUN5111DW1T1GOSCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MUN51**DW1T

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