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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MUN2235T1G

MUN2235T1G

MUN2235T1G
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Part Number MUN2235T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 338MW SC59
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2831243 pcs
Reference Price
(In US Dollars)		15000 pcs
$0.009

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Part Number MUN2235T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 338MW SC59 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2831243 pcs Data sheet MUN2235, MUN5235, DTC123Jxx, NSBC123JF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SC-59-3 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 230mW Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59-3
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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