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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2212LT1

MMUN2212LT1

MMUN2212LT1
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Part Number MMUN2212LT1
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 246MW SOT23-3
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5133 pcs
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Part Number MMUN2212LT1 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 246MW SOT23-3 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5133 pcs Data sheet MMUN22xxLTx Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 246mW Packaging Cut Tape (CT)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MMUN2212LT1OSCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MMUN22**L

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