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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2137LT1G

MMUN2137LT1G

MMUN2137LT1G
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Part Number MMUN2137LT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5637530 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs
$0.008$0.007$0.006
30000 pcs75000 pcs150000 pcs
$0.006$0.005$0.004

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$0.008

Product parameter

Part Number MMUN2137LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5637530 pcs Data sheet MUN(2,5)137, DTA144Wxx, NSBA144WF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23 (TO-236AB) Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 47 kOhms
Power - Max 246mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MMUN2137LT1G-ND
MMUN2137LT1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23 (TO-236AB) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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