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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2135LT1G

MMUN2135LT1G

MMUN2135LT1G
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Part Number MMUN2135LT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2343790 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.047$0.042$0.023$0.014$0.01

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Product parameter

Part Number MMUN2135LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2343790 pcs Data sheet MUN5135, DTA123Jxx, NSBA123JF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23 (TO-236AB) Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 246mW Packaging Cut Tape (CT)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MMUN2135LT1GOSCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 36 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23 (TO-236AB) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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