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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE5731G

MJE5731G

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Part Number	MJE5731G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 350V 1A TO-220AB
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 130662 pcs
Reference Price (In US Dollars)	1 pcs	50 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.399	$0.338	$0.278	$0.229	$0.181

Product parameter
Data sheet

Product parameter

Part Number	MJE5731G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 350V 1A TO-220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	130662 pcs	Data sheet	MJE5730, 31(A)
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	Transistor Type	PNP
Supplier Device Package	TO-220AB	Series	-
Power - Max	40W	Packaging	Tube
Package / Case	TO-220-3	Other Names	MJE5731G-ND MJE5731GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	10MHz
Detailed Description	Bipolar (BJT) Transistor PNP 350V 1A 10MHz 40W Through Hole TO-220AB	DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Current - Collector Cutoff (Max)	1mA	Current - Collector (Ic) (Max)	1A

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