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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE5742G

MJE5742G

MJE5742G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJE5742G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 400V 8A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 79042 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$0.568$0.482$0.41$0.337$0.279

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Target Price:(USD)
Quantity:
Total:
$0.568

Product parameter

Part Number MJE5742G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 400V 8A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 79042 pcs Data sheet MJE5740, MJE5742
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 400V
Vce Saturation (Max) @ Ib, Ic 3V @ 400mA, 8A Transistor Type NPN - Darlington
Supplier Device Package TO-220AB Series -
Power - Max 2W Packaging Tube
Package / Case TO-220-3 Other Names MJE5742GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 26 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 400V 8A 2W Through Hole TO-220AB DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 8A

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