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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11032

MJ11032

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Part Number	MJ11032
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 50A TO3
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant

~~In Stock~~ 5333 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	MJ11032	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 50A TO3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5333 pcs	Data sheet	MJ11028,29,30,32,33
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	3.5V @ 500mA, 50A	Transistor Type	NPN - Darlington
Supplier Device Package	TO-3	Series	-
Power - Max	300W	Packaging	Tray
Package / Case	TO-204AE	Other Names	MJ11032OS
Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V	Current - Collector Cutoff (Max)	2mA
Current - Collector (Ic) (Max)	50A

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