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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11028G

MJ11028G

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Part Number	MJ11028G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 60V 50A TO3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 15321 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs
Reference Price (In US Dollars)	$3.45	$3.116	$2.58	$2.247

Product parameter
Data sheet

Product parameter

Part Number	MJ11028G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 60V 50A TO3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	15321 pcs	Data sheet	MJ11028,29,30,32,33
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	3.5V @ 500mA, 50A	Transistor Type	NPN - Darlington
Supplier Device Package	TO-3	Series	-
Power - Max	300W	Packaging	Tray
Package / Case	TO-204AE	Other Names	MJ11028GOS MJ11028GOS-ND MJ11028GOS-NDOS MJ11028GOSOS
Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	30 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 60V 50A 300W Through Hole TO-3	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V
Current - Collector Cutoff (Max)	2mA	Current - Collector (Ic) (Max)	50A

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