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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ11016G

MJ11016G

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Part Number	MJ11016G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 30A TO3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 37059 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$1.686	$1.516	$1.242	$1.057	$0.892

Product parameter
Data sheet

Product parameter

Part Number	MJ11016G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 30A TO3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	37059 pcs	Data sheet	MJ11012,15,16
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A	Transistor Type	NPN - Darlington
Supplier Device Package	TO-204 (TO-3)	Series	-
Power - Max	200W	Packaging	Tray
Package / Case	TO-204AA, TO-3	Other Names	MJ11016GOS
Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	27 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	4MHz
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Current - Collector Cutoff (Max)	1mA	Current - Collector (Ic) (Max)	30A

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