SIHB12N65E-GE3
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See Product Specifications for product details.
Buy SIHB12N65E-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHB12N65E-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET N-CH 650V 12A D2PAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 1000 pcs | ||||
|---|---|---|---|---|---|
| $0.487 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHB12N65E-GE3 | Manufacturer | Vishay Siliconix |
|---|---|---|---|
| Description | MOSFET N-CH 650V 12A D2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 64598 pcs | Data sheet | SIHB12N65E-GE3 |
| Category | Discrete Semiconductor Products | Voltage - Test | 1224pF @ 100V |
| Voltage - Breakdown | D²PAK (TO-263) | Vgs(th) (Max) @ Id | 380 mOhm @ 6A, 10V |
| Technology | MOSFET (Metal Oxide) | Series | - |
| RoHS Status | Tape & Reel (TR) | Rds On (Max) @ Id, Vgs | 12A (Tc) |
| Polarization | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 19 Weeks | Manufacturer Part Number | SIHB12N65E-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 70nC @ 10V | Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| FET Feature | N-Channel | Expanded Description | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | - | Description | MOSFET N-CH 650V 12A D2PAK |
| Current - Continuous Drain (Id) @ 25°C | 650V | Capacitance Ratio | 156W (Tc) |
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