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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHB21N60EF-GE3

SIHB21N60EF-GE3

SIHB21N60EF-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SIHB21N60EF-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 21A D2PAK TO263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 40817 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$1.779$1.589$1.303$1.055$0.89

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Target Price:(USD)
Quantity:
Total:
$1.779

Product parameter

Part Number SIHB21N60EF-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 600V 21A D2PAK TO263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 40817 pcs Data sheet SIHB21N60EF
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263AB (D²PAK) Series -
Rds On (Max) @ Id, Vgs 176 mOhm @ 11A, 10V Power Dissipation (Max) 227W (Tc)
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2030pF @ 100V Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263AB (D²PAK) Current - Continuous Drain (Id) @ 25°C 21A (Tc)

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