SI3460BDV-T1-GE3
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See Product Specifications for product details.
Buy SI3460BDV-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI3460BDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET N-CH 20V 8A 6-TSOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 3000 pcs | ||||
|---|---|---|---|---|---|
| $0.118 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI3460BDV-T1-GE3 | Manufacturer | Vishay Siliconix |
|---|---|---|---|
| Description | MOSFET N-CH 20V 8A 6-TSOP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 180340 pcs | Data sheet | SI3460BDV |
| Category | Discrete Semiconductor Products | Voltage - Test | 860pF @ 10V |
| Voltage - Breakdown | 6-TSOP | Vgs(th) (Max) @ Id | 27 mOhm @ 5.1A, 4.5V |
| Technology | MOSFET (Metal Oxide) | Series | TrenchFET® |
| RoHS Status | Tape & Reel (TR) | Rds On (Max) @ Id, Vgs | 8A (Tc) |
| Polarization | SOT-23-6 Thin, TSOT-23-6 | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 15 Weeks | Manufacturer Part Number | SI3460BDV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 24nC @ 8V | Gate Charge (Qg) (Max) @ Vgs | 1V @ 250µA |
| FET Feature | N-Channel | Expanded Description | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss) | - | Description | MOSFET N-CH 20V 8A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 20V | Capacitance Ratio | 2W (Ta), 3.5W (Tc) |
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