SI3460DV-T1-GE3
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See Product Specifications for product details.
Buy SI3460DV-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI3460DV-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 20V 5.1A 6TSOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI3460DV-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 20V 5.1A 6TSOP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4134 pcs | Data sheet | SI3460DV |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Vgs (Max) | ±8V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V | Power Dissipation (Max) | 1.1W (Ta) |
| Packaging | Tape & Reel (TR) | Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V | Detailed Description | N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
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