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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M
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Part Number TPCF8B01(TE85L,F,M
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 2.7A VS-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6030 pcs
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Part Number TPCF8B01(TE85L,F,M Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 2.7A VS-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6030 pcs Data sheet Mosfets Prod GuideTPCF8B01
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.2V @ 200µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package VS-8 (2.9x1.5) Series U-MOSIII
Rds On (Max) @ Id, Vgs 110 mOhm @ 1.4A, 4.5V Power Dissipation (Max) 330mW (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SMD, Flat Lead
Other Names TPCF8B01(TE85L,F)
TPCF8B01(TE85L,F)-ND
TPCF8B01(TE85L,F,M-ND
TPCF8B01(TE85LFMTR
TPCF8B01FTR
TPCF8B01FTR-ND
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 5V FET Type P-Channel
FET Feature Schottky Diode (Isolated) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description P-Channel 20V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)

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