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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPCC8A01-H(TE12LQM

TPCC8A01-H(TE12LQM

TPCC8A01-H(TE12LQM
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Part Number TPCC8A01-H(TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 21A SBD 8TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5487 pcs
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Part Number TPCC8A01-H(TE12LQM Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 21A SBD 8TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5487 pcs Data sheet TPCC8A01-HMosfets Prod Guide
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.3V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSV-H
Rds On (Max) @ Id, Vgs 9.9 mOhm @ 10.5A, 10V Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPCC8A01-H(TE12LQMTR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 21A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 21A (Ta)

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