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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM
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Part Number TPCC8006-H(TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 22A 8TSON
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5769 pcs
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Part Number TPCC8006-H(TE12LQM Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 22A 8TSON Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5769 pcs Data sheet TPCC8006-HMosfets Prod Guide
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.3V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3) Series U-MOSVI-H
Rds On (Max) @ Id, Vgs 8 mOhm @ 11A, 10V Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPCC8006-H(TE12LQMTR
TPCC8006HTE12LQM
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 22A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 22A (Ta)

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