TK10A60W,S4VX
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| Part Number | TK10A60W,S4VX |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 600V 9.7A TO-220SIS |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 1 pcs | ||||
|---|---|---|---|---|---|
| $1.169 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | TK10A60W,S4VX | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Description | MOSFET N-CH 600V 9.7A TO-220SIS | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 25760 pcs | Data sheet | TK10A60W |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220SIS | Series | DTMOSIV |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 4.9A, 10V | Power Dissipation (Max) | 30W (Tc) |
| Packaging | Tube | Package / Case | TO-220-3 Full Pack |
| Other Names | TK10A60W,S4VX(M TK10A60WS4VX |
Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | FET Type | N-Channel |
| FET Feature | Super Junction | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
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