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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2106(T5L,F,T)

RN2106(T5L,F,T)

RN2106(T5L,F,T)
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Part Number RN2106(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W SSM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 349983 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs100 pcs
$0.11$0.10$0.072$0.056

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Product parameter

Part Number RN2106(T5L,F,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 349983 pcs Data sheet RN2101-06
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package SSM Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Cut Tape (CT)
Package / Case SC-75, SOT-416 Other Names RN2106(T5LFT)CT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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