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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2105MFV,L3F

RN2105MFV,L3F

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Part Number	RN2105MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4633 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	RN2105MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4633 pcs	Data sheet	RN2101-06MFV
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA	Transistor Type	PNP - Pre-Biased
Supplier Device Package	VESM	Series	-
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	150mW	Package / Case	SOT-723
Other Names	RN2105MFVL3F	Mounting Type	Surface Mount
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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