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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1906FE,LF(CT

RN1906FE,LF(CT

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Part Number	RN1906FE,LF(CT
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

	250 pcs	500 pcs	1000 pcs
~~In Stock~~ 1222610 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	25 pcs	100 pcs
	$0.098	$0.089	$0.064	$0.05
	$0.031	$0.027	$0.018

Product parameter
Data sheet

Product parameter

Part Number	RN1906FE,LF(CT	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS 2NPN PREBIAS 0.1W ES6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1222610 pcs	Data sheet	RN1901FE-06FE
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	2 NPN - Pre-Biased (Dual)
Supplier Device Package	ES6	Series	-
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	4.7 kOhms
Power - Max	100mW	Packaging	Cut Tape (CT)
Package / Case	SOT-563, SOT-666	Other Names	RN1906FELF(CTCT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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