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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1905FE,LF(CB

RN1905FE,LF(CB

RN1905FE,LF(CB
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Part Number RN1905FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1111986 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs100 pcs
$0.108$0.097$0.07$0.054
250 pcs500 pcs1000 pcs 
$0.034$0.029$0.02 

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Target Price:(USD)
Quantity:
Total:
$0.108

Product parameter

Part Number RN1905FE,LF(CB Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1111986 pcs Data sheet RN1901FE-06FE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 100mW Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666 Other Names RN1905FE(TE85LF)CT
RN1905FE(TE85LF)CT-ND
RN1905FELF(CBCT
RN1905FELF(CTCT
RN1905FELF(CTCT-ND
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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