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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1427TE85LF

RN1427TE85LF

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Part Number RN1427TE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 200MW SMINI
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 564063 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.041

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Target Price:(USD)
Quantity:
Total:
$0.041

Product parameter

Part Number RN1427TE85LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 200MW SMINI Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 564063 pcs Data sheet RN142x
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package S-Mini Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names RN1427(TE85L,F)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 300MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 800mA 300MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 800mA Base Part Number RN142*

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